Full Description

1.1 This guide covers the determination of the density of crystallographic defects in unpatterned polished and epitaxial silicon wafers. Epitaxial silicon wafers may exhibit dislocations, hillocks, shallow pits or epitaxial stacking faults, while polished wafers may exhibit several forms of crystallographic defects or surface damage. Use of this practice is based upon the application of several referenced standards in a prescribed sequence to reveal and count microscopic defects or structures.

1.2 Materials for which this practice is applicable may be defined by the limitations of the referenced documents.

1.2.1 This practice is suitable for use with epitaxial or polished wafers grown in either (111) or (100) direction and doped either p or n-type with resistivity greater than 0.0005 Omega-cm.

1.2.2 This practice is suitable for use with epitaxial wafers with layer thickness greater than 0.5

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Published: 06/10/1997 Number of Pages: 3File Size: 1 file , 31 KB