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ASTM F95-89(2000) [ Withdrawn ]
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ASTM F95-89(2000) Standard Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer (Withdrawn 2003)
standard by ASTM International, 01/01/2000
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This standard was transferred to SEMI (www.semi.org) May 2003
1.1 This test method provides a technique for the measurement of the thickness of epitaxial layers of silicon deposited on silicon substrates. A dispersive infrared spectrophotometer is used. For this measurement, the resistivity of the substrate must be less than 0.02[omega] cm at 23oC and the resistivity of the layer must be greater than 0.1[omega] cm at 23oC.
1.2 This technique is capable of measuring the thickness of both n- and p-type layers greater than 2