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ASTM F723-99 [ Withdrawn ]
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ASTM F723-99 Standard Practice for Conversion Between Resistivity and Dopant Density for Boron-Doped, Phosphorus-Doped, and Arsenic-Doped Silicon (Withdrawn 2003)
standard by ASTM International, 06/10/1999
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Full Description
This standard was transferred to SEMI (www.semi.org) May 2003
1.1 This practice describes a conversion between dopant density and resistivity for boron- and phosphorus-doped single crystal silicon at 23 although the accuracy of conversions for other dopants has not been established, it is expected that the phosphorus data would be satisfactory for use with arsenic and antimony, except when approaching solid solubility. See 5.3.
1.4 These conversions are between resistivity and dopant density and should not be confused with conversions between resistivity and carrier density or with mobility relations.
Note 1-The commonly used conversion between resistivity and dopant density compiled by Irvin (6) is compared with this conversion in Appendix X2. In this compilation, Irvin used the term "impurity concentration" instead of the term "dopant density."1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.