Full Description

1.1 This test method is used to determine whether an ingot or wafer of gallium arsenide is monocrystalline and, if so, to measure the etch pit density and to judge the nature of crystal imperfections. To the extent possible, it follows the corresponding test method for silicon, Test Method F47. Test Method F47 also presents the definition of many crystallographic terms, applicable to this test method.

1.2 This procedure is suitable for gallium arsenide crystals with etch pit densities between 0 and 200000/cm2.

1.3 Gallium arsenide, either doped or undoped, and with various electrical properties, may be evaluated by this test method. The front surface normal direction of the sample must be parallel to the 001> within + 5

Product Details

Published: 06/10/1999 Number of Pages: 6File Size: 1 file , 53 KB