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This standard was transferred to SEMI (www.semi.org) May 2003

1.1 This test method covers the measurement of generation lifetime and generation velocity of silicon wafers.

1.2 The measurement requires the fabrication of a guard-ring MOS (Metal-Oxide-Silicon) capacitor. This test method is therefore destructive to the silicon wafer.

1.3 This test may also be applied to semiconductor materials other than silicon and to insulators other than silicon dioxide, but the details of capacitor fabrication and the analyses and interpretation of data in such cases are not given in this test method.

1.4 Both p- and n-type silicon in the doping range from 10¹³ to 10 ¹⁷ cm^-3 can be evaluated by this test method. The approximate range of generation lifetime that can be measured is 1

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Published: 01/01/2000 Number of Pages: 7File Size: 1 file , 130 KB